Flash drive fast wear leveling

ABSTRACT

A system and method comprising a non-volatile memory including one or more memory blocks to store data, a controller to allocate one or more of the memory blocks to store data, and a wear-leveling table populated with pointers to unallocated memory blocks in the non-volatile memory, the controller to identify one or more pointers in the wear-leveling table and to allocate the unallocated memory blocks associated with the identified pointers for the storage of data.

REFERENCE TO RELATED APPLICATIONS

This application claims priority from U.S. Provisional Application No.60/713,913, filed Sep. 1, 2005, which is incorporated herein byreference.

FIELD OF THE INVENTION

This invention relates generally to memory devices, and morespecifically to improved wear leveling of flash memory.

BACKGROUND OF THE INVENTION

Non-volatile memory devices, such as flash memory, are widely used indata storage applications. Although the physical characteristics offlash memory allow for non-volatile data storage, flash memory has thedisadvantage of having a finite lifespan. For instance, NAND flashmemory blocks typically wear out or fail after undergoing approximately100,000 to 1,000,000 write operations.

A flash driver typically performs memory operations, e.g., read, write,and erase operations, on memory blocks. During write operations theflash driver is commonly required to identify erased memory blocksavailable to store data. Many flash drivers perform these writeoperations on the most recently erased memory block. Although thismethod efficiently locates erased memory blocks for performing writeoperations, it does not always evenly distribute write operations amongthe memory blocks and thus decreases the life of the flash memory.

To maximize the lifespan of flash memory, many systems implementwear-leveling techniques that attempt to more evenly appropriate writeoperations over the memory blocks. For instance, flash drivers mayincrease wear-leveling by linearly searching a logical-to-physical tablethat provides pointers to all of the memory blocks in flash memory.There are typically flags accompanying the pointers in thelogical-to-physical table, for example, an erase flag to indicate thatthe memory block corresponding to the pointer is erased and a bad blockflag to indicate that the memory block has failed.

Although this wear-leveling technique may increase the lifespan of theflash memory by distributing the write operations, the linear search ofthe logical-to-physical table used to find the next erased block towrite data is inefficient and, in some circumstances, impossible toperform given the processing requirements of the flash driver. Forinstance, a flash driver performing a linear search on alogical-to-physical table having 1024 memory blocks with 24 availableand erased memory blocks, requires an average of 44 accesses to thelogical-to-physical table to find an erased memory block, with aworst-case scenario of 1000 accesses to the logical-to-physical table.When the flash memory includes 10 bad memory blocks and only 14 erasedmemory blocks, the flash driver will have to access thelogical-to-physical table an average of 77 times to find an erasedblock.

DESCRIPTION OF THE DRAWINGS

The invention may be best understood by reading the disclosure withreference to the drawings.

FIG. 1 illustrates, in block form, a memory system useful withembodiments of the present invention.

FIG. 2 shows a flowchart illustrating example operations of the memorysystem shown in FIG. 1.

FIG. 3 illustrates, in block form, another memory system useful withembodiments of the present invention.

FIG. 4 shows a flowchart illustrating example operations of the memorysystem shown in FIG. 3.

DETAILED DESCRIPTION

FIG. 1 illustrates, in block form, a memory system 100 useful withembodiments of the present invention. Referring to FIG. 1, the memorysystem 100 includes a flash memory 110 having a plurality of memoryblocks 105-1 to 105-N to store data. In some embodiments, the flashmemory 110 may include 1024 memory blocks configured according to aSmartMedia™ specification, for example, with a maximum of 1000 of the1024 memory blocks allocated for the storage of data at any given time.The remaining unallocated memory blocks may include erased or erasablememory blocks available to store data, bad or faulty memory blocks, orboth. The flash memory 110 may be NAND flash memory, or any other typeof non-volatile memory capable of storing data.

The memory system 100 includes a flash memory controller 120 to performmemory access operations, such as read, write, and erase operations, onmemory blocks 105-1 to 105-N of the flash memory 110. When prompted towrite data to the flash memory 110, the flash memory controller 120 mayidentify one or more unallocated memory blocks in the flash memory 110available to store the data and then write the data to the identifiedmemory block(s). The flash memory controller 120 may be implemented asfirmware, a processor or multiple communicating processors executinginstruction stored in a computer-readable medium, a set of discretehardware components, or the like.

The memory system 100 includes a logical-to-physical table 130 populatedwith pointers to the memory blocks 105-1 to 105-N in the flash memory110. The pointers may be addresses to physical locations of memoryblocks 105-1 to 105-N in the flash memory 110. The logical-to-physicaltable 130 may be located in a redundant area of the flash memory and/orstored in another memory, e.g., a random access memory (RAM) or thelike, included in the memory system 100.

During an initial configuration of the memory system 100, the flashmemory controller 120 may initialize the pointers in thelogical-to-physical table 130, for example, in a 1:1 configuration withthe memory blocks 105-1 to 105-N in the flash memory 110. In someembodiments, the 1:1 mapping to the memory blocks 105-1 to 105-N may beperformed during manufacturing or during an initial use of the memorysystem 100. Thus, when initially writing data to the flash memory 110,the flash memory controller 120 may identify memory blocks 105-1 to105-N to store data by linearly sequencing through thelogical-to-physical table 130.

After the initialization of the logical-to-physical table 130 or whenthe flash memory controller 120 completes the linear sequencing throughthe logical-to-physical table 130, the flash memory controller 120identifies pointers to erased or erasable memory blocks in the flashmemory 110 during data write operations. Since searching thelogical-to-physical table 130 may be an inefficient and onerous task forthe flash memory controller 120, embodiments of the memory system 100include a wear-leveling table 140 populated with pointers to unallocatedmemory blocks in the flash memory 110. The unallocated memory blocks maybe memory blocks 105-1 to 105-N available to store data, such as memoryblocks that the flash memory controller 120 has previously erased, ormay be memory blocks 105-1 to 105-N that have failed or that are faulty.The wear-leveling table 140 may be located in a redundant area of theflash memory and/or stored in another memory, e.g., a random accessmemory (RAM) or the like, included in the memory system 100.

The flash memory controller 120 includes a wear-leveling unit 125 topopulate the wear-leveling table 140 with the pointers to theunallocated memory blocks. In some embodiments, the wear-leveling unit125 populates the wear-leveling table 140 with pointers to theunallocated memory blocks after the or concurrently to initializationthe logical-to-physical table 130, and/or after or concurrently with theflash memory controller 130 storing data to memory blocks 105-1 to 105-Ncorresponding to the initialized pointers in the logical-to-physicaltable 130.

When the flash memory controller 120 determines to write data to theflash memory 110, the wear-leveling unit 125 may access thewear-leveling table 140 to identify at least one erased or erasablememory block in the flash memory 110 available to store the data. Thewear-leveling table 140 may also include data to indicate which of thepointers correspond to erased or erasable memory blocks and which of thepointers correspond to faulty or failed memory blocks. Since thewear-leveling table 140 includes pointers to unallocated memory blocksin the flash memory 110, the wear-leveling unit 125 may reduce the timerequired to identify an erased or erasable memory block during datawrite operations.

The wear-leveling unit 125 may implement a prioritization scheme thatprioritizes the wear-leveling table 140, for example, during thepopulation of the wear-leveling table 140. The wear-leveling unit 125may prioritize the unallocated memory blocks, or the erased or erasablememory blocks, according to the number of write operations each memoryblock has undergone or according to when the memory blocks were erasedor deemed erasable. The prioritization of the wear-leveling table 140may allow the wear-leveling unit 125 to linearly access pointers toerased or erasable memory blocks according to their priority, thusallowing the memory system 100 to more evenly distribute writeoperations among the memory blocks 105-1 to 105-N and helping toelongate the life of the flash memory 110.

FIG. 2 shows a flowchart 200 illustrating example operations of thememory system shown in FIG. 1. Referring to FIG. 2, in a block 210, theflash memory controller 120 identifies unallocated memory blocks in theflash memory 110. In some embodiments, the flash memory controller 120may identify the unallocated memory blocks in the flash memory 110responsive to a determination that one or more memory blocks 105-1 to105-N in the flash memory 110 no longer need to store data, and eithererases the memory block or deems it erasable. The flash memorycontroller 120 may also identify unallocated memory blocks responsive toa determination that a memory block 105-1 to 105-N in the flash memory110 is faulty or has failed.

In a block 220, the flash memory controller 120 populates awear-leveling table 140 with pointers to the unallocated memory blocksin the flash memory. In some embodiments, the wear-leveling unit 125populates the wear-leveling table 140 with the pointers. Thewear-leveling table 140 may include pointers to erased or erasablememory blocks in the flash memory 110, or to faulty or failed memoryblocks in the flash memory 110.

The flash memory controller 120 may implement a prioritization schemethat prioritizes the wear-leveling table 140, for example, during thepopulation of the wear-leveling table 140. The flash memory controller120 may prioritize the unallocated memory blocks or the erased orerasable memory blocks, according to the number of write operations eachmemory block has undergone, or according to when the memory blocks wereerased or deemed erasable.

In a block 230, the flash memory controller 120 identifies a pointer toan unallocated memory block in the wear-leveling table 140, theunallocated memory block available to store data from the flash memorycontroller 120. The identified pointer may be to an unallocated memoryblock available to store data, such as an erased memory block or anerasable memory block. When the memory block is erasable, the flashmemory controller 120 may erase the memory block prior to writing thedata to the memory block.

The flash memory controller 120 may identify the pointer to anunallocated memory block by accessing the wear-leveling table 140 forpointers to erased or erasable memory blocks in the flash memory 110.When the wear-leveling table 140 is prioritized by the flash memorycontroller 120, the wear-leveling unit 125 may linearly access pointersto erased or erasable memory blocks, thus reducing search time andallowing the memory system 100 to more evenly distribute writeoperations among the memory blocks 105-1 to 105-N.

In a next block 240, the flash memory controller 120 writes data to thememory block corresponding to the identified pointer. In someembodiments, the flash memory controller 120 may erase the memory blockcorresponding to the identified pointer prior to writing data to thememory block.

FIG. 3 illustrates, in block form, another memory system 300 useful withembodiments of the present invention. Referring to FIG. 3, the memorysystem 300 includes a plurality of flash memory zones 310-1 to 310-N tostore data from a flash memory controller 330. In some embodiments, eachflash memory zone 310-1 to 310-N may include 1024 memory blocksconfigured according to a SmartMedia™ specification, for example, with amaximum of 1000 of the 1024 memory blocks allocated for the storage ofdata at any given time. The remaining unallocated memory blocks mayinclude erased or erasable memory blocks available to store data, bad orfaulty memory blocks, or both. The flash memory zones 310-1 to 310-N maybe NAND flash memory, or any other type of non-volatile memory capableof storing data.

The memory system 300 includes a flash memory controller 320 to performmemory access operations, such as read, write, and erase operations, onthe flash memory zones 310-1 to 310-N. When prompted to write data toone of the flash memory zones 310-1 to 310-N, the flash memorycontroller 120 may identify one or more unallocated memory blocksassociated with a flash memory zone 310 available to store the data andthen write the data to the identified memory block(s). The flash memorycontroller 320 may be implemented as firmware, a processor or multiplecommunicating processors executing instruction stored in acomputer-readable medium, a set of discrete hardware components, or thelike.

The memory system 300 includes a logical-to-physical table 330 populatedwith pointers to the memory blocks in one or more of the flash memoryzones 310-1 to 310-N. The pointers may be addresses to physicallocations of memory blocks in the flash memory zones 310-1 to 310-N. Thelogical-to-physical table 330 may be located in a redundant area of theflash memory and/or stored in another memory, e.g., a random accessmemory (RAM) or the like, included in the memory system 300.

During an initial configuration of the memory system 300, the flashmemory controller 320 may initialize the pointers in thelogical-to-physical table 330, for example, in a 1:1 configuration withthe memory blocks in at least one of the flash memory zones 310-1 to310-N. In some embodiments, the 1:1 mapping to the memory blocks may beperformed during manufacturing or during an initial use of the memorysystem 300. Thus, when initially writing data to the flash memory zones310-1 to 310-N, the flash memory controller 320 may identify memoryblocks to store data by linearly sequencing through thelogical-to-physical table 330.

After the initialization of the logical-to-physical table 330 or whenthe flash memory controller 320 completes the linear sequencing throughthe logical-to-physical table 330, the flash memory controller 320 isrequired to identify for pointers to erased or erasable memory blocks inthe flash memory zones 310-1 to 310-N during data write operations.Since searching the logical-to-physical table 330 may be an inefficientand onerous task for the flash memory controller 320, embodiments of thememory system 300 include a wear-leveling table 340 populated withpointers to unallocated memory blocks in one or more of the flash memoryzones 310-1 to 310-N. The wear-leveling table 340 may be located in aredundant area of the flash memory and/or stored in another memory,e.g., a random access memory (RAM) or the like, included in the memorysystem 300.

The flash memory controller 320 includes a wear-leveling unit 325 topopulate the wear-leveling table 340 with the pointers to theunallocated memory blocks in one or more of the flash memory zones 310-1to 310-N. In some embodiments, the wear-leveling unit 325 may populatethe wear-leveling table 340 according to wear-leveling table data fromthe flash memory zones 310-1 to 310-N. The wear-leveling table data maybe the pointers to the unallocated memory blocks in a correspondingflash memory zone 310-1 to 310-N. The wear-leveling unit 325 populatesthe wear-leveling table 340 with pointers to the unallocated memoryblocks after the or concurrently to the initialization of thelogical-to-physical table 330, and/or after or concurrently with theflash memory controller 320 storing data to memory blocks correspondingto the initialized pointers in the logical-to-physical table 330.

The wear-leveling unit 325 may implement a prioritization scheme thatprioritizes the wear-leveling table 340, for example, during thepopulation of the wear-leveling table 340. The wear-leveling unit 325may prioritize the unallocated memory blocks, or the erased or erasablememory blocks, according to the number of write operations each memoryblock has undergone or according to when the memory blocks were erasedor deemed erasable. The prioritization of the wear-leveling table 140may allow the wear-leveling unit 325 to linearly access pointers toerased or erasable memory blocks according to their priority, thusallowing the memory system 300 to more evenly distribute writeoperations among the memory blocks and helping to elongate the life ofthe flash memory zones 310-1 to 310-N.

When the flash memory controller 320 determines to write data to one ofthe flash memory zones, for example flash memory zone 310-1, thewear-leveling unit 325 may identify whether pointers stored in thewear-leveling table 340 corresponds to the flash memory zone 310-1. Whenthe pointers stored in the wear-leveling table 340 correspond to flashmemory zone 310-1, the wear-leveling unit 325 may access thewear-leveling table 340 to identify at least one erased or erasablememory block in the flash memory, zones 310-1 to 310-N available tostore the data.

When wear-leveling table 340 is populated with pointers to that do notcorrespond to the flash memory zone 310-1, the wear-leveling unit 325may populate the wear-leveling table 340 with pointers to the flashmemory zone 310-1. For instance, the wear-leveling unit 325 may populatethe wear-leveling table 340 with wear-leveling table data stored in aredundant area of flash memory zone 310-1. In some embodiments, theflash memory controller 320 may store the pointers stored in thewear-leveling table 340 to a redundant area of their corresponding flashmemory zone 310-2 to 310-N prior to populating the wear-leveling table340 with pointers corresponding to the flash memory zone 310-1.

FIG. 4 shows a flowchart 400 illustrating example operations of thememory system shown in FIG. 3. Referring to FIG. 4, in a block 410, theflash memory controller 320 identifies unallocated memory blocksassociated with one of the flash memory zones 310-1 to 310-N. The flashmemory controller 320 may identify the unallocated memory blocksaccording to wear-leveling table data associated with the flash memoryzone.

In a decision block 415, the flash memory controller 320 determineswhether the number of identified unallocated memory blocks exceeds athreshold. The threshold may be preset in the flash memory controller320 or dynamically determined. The threshold may correspond to a numberof entries in the wear-leveling table and/or may indicate to the flashmemory controller 320 whether the logical-to-physical table 330 has beeninitialized.

When the number of identified unallocated memory blocks exceeds thethreshold, the flash memory controller 320, in a block 420, initializesa logical-to-physical table 330 for the flash memory zone 310-1 to310-N. The initialization of the logical-to-physical table 330 mayinclude linearly accessing the pointers of the logical-to-physical table330 prior to accessing the wear-leveling table 340. When the number ofidentified unallocated memory blocks does not exceed the threshold,execution proceeds to block 430.

In a block 430, the flash memory controller 320 populates thewear-leveling table 340 with pointers to the identified memory blocks inthe flash memory zone 310-1 to 310-N. In a block 440, the flash memorycontroller 320 receives a command to write data to one or more memoryblocks in the flash memory zone 310-1 to 310-N. The command may indicatea flash memory zone 310-1 to 310-N to store the data.

In a decision block 445, the flash memory controller 320 determineswhether the write command corresponds to the current flash memory zone310-1 to 310-N. When the write command corresponds to the current flashmemory zone 310-1 to 310-N, the flash memory controller 320, in a block450, writes the data to the memory block corresponding to a pointer inthe wear-leveling table 340.

When the command does not correspond to the current flash memory zone310-1 to 310-N, execution returns to block 410, where the flash memorycontroller 320 identifies unallocated memory blocks associated with theflash memory zone 310-1 to 310-N identified by the write command. Insome embodiments, the pointers in the wear-leveling table 340 may bestored to an associated flash memory zone 310-1 to 310-N prior to there-execution of block 410.

One of skill in the art will recognize that the concepts taught hereincan be tailored to a particular application in many other advantageousways. In particular, those skilled in the art will recognize that theillustrated embodiments are but one of many alternative implementationsthat will become apparent upon reading this disclosure.

The preceding embodiments are exemplary. Although the specification mayrefer to “an”, “one”, “another”, or “some” embodiment(s) in severallocations, this does not necessarily mean that each such reference is tothe same embodiment(s), or that the feature only applies to a singleembodiment.

1. A method comprising: populating a wear-leveling table with pointersto one or more memory blocks in a flash memory, where the pointers areassociated with erased memory blocks or memory blocks that are faulty;identifying at least one pointer in the wear-leveling table associatedwith an erased memory block; storing data to the memory block associatedwith the identified pointer; identifying erased memory blocks and faultymemory blocks in the flash memory; comparing a number of identifiederased memory blocks and faulty memory blocks to a threshold; andpopulating the wear-leveling table responsive to the comparing orinitializing the flash memory with pointers to the memory blocksresponsive to the comparing.
 2. The method of claim 1 includes erasingdata stored in one or more of the memory blocks responsive to theidentifying at least one pointer in the wear-leveling table and prior tostoring data to the memory block associated with the identified pointer.3. The method of claim 1 includes prioritizing the pointers in thewear-leveling table according to when the memory blocks associated withthe pointers were erased.
 4. The method of claim 3 includes accessingthe wear-leveling table for pointers according to the prioritizing. 5.The method of claim 1 includes prioritizing the pointers in thewear-leveling table according to the number of write operationsperformed on the memory blocks associated with the pointers.
 6. Themethod of claim 1 includes initializing a logical-to-physical table withpointers to the memory blocks in the flash memory concurrently topopulating the wear-leveling table with pointers associated with theerased memory blocks.
 7. The method of claim 6 includes allocating thememory blocks associated with the pointers in the logical-to-physicaltable prior to accessing the wear-leveling table for pointers to erasedmemory blocks.
 8. A method comprising: populating a wear-leveling tablewith pointers to one or more memory blocks in a flash memory, where thepointers are associated with erased memory blocks or memory blocks thatare faulty; receiving a write command identifying a zone of the flashmemory to store data; determining the wear-leveling table does notcorrespond to the identified zone; re-populating the wear-leveling tablewith pointers to memory blocks corresponding to the identified zone;identifying at least one pointer in the re-populated wear-leveling tableassociated with an erased memory block; and storing data to the memoryblock associated with the identified pointer.
 9. The method of claim 8,comprising: identifying erased memory blocks and faulty memory blocks inthe flash memory; comparing a number of identified erased memory blocksand faulty memory blocks to a threshold; and populating thewear-leveling table responsive to the comparing.
 10. The method of claim8, comprising: identifying erased memory blocks and faulty memory blocksin the flash memory; comparing a number of identified erased memoryblocks and faulty memory blocks to a threshold; and initializing theflash memory with pointers to the memory blocks responsive to thecomparing.